Fabricante Electrônico | Nome de Peças | Folha de dados | Descrição Electrónicos |
Toshiba Semiconductor |
RFM03U3P
|
274Kb / 6P |
Field Effect Transistors Silicon N-Channel MOS
|
Renesas Technology Corp |
2SK1493
|
589Kb / 11P |
N-CHANNEL MOS FIELD EFFECT POWER TRANSISTORS
1993 |
2SK1495
|
592Kb / 11P |
N-CHANNEL MOS FIELD EFFECT POWER TRANSISTORS
1993 |
NXP Semiconductors |
BC264A
|
294Kb / 6P |
N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS
December 1990 |
BF510
|
37Kb / 7P |
N-channel silicon field-effect transistors
December 1997 |
New Jersey Semi-Conduct... |
J111
|
454Kb / 2P |
N-channel silicon field-effect transistors
|
NXP Semiconductors |
BF245A
|
307Kb / 13P |
N-channel silicon field-effect transistors
1996 Jul 30 |
BF245A
|
97Kb / 11P |
N-channel silicon field-effect transistors
1996 Jul 30 |
PMBFJ308
|
98Kb / 12P |
N-channel silicon field-effect transistors
1996 Sep 11 |
Quanzhou Jinmei Electro... |
BF245A
|
73Kb / 11P |
N-channel silicon field-effect transistors
|